PC komponenty

4 GB DDR3L SO-DIMM 1866 MHz, 512Mx8; Non-ECC Unbuffer Memory; Pracovní teplota: 0°C ~ +85°C; Interface : DDR3; Form Factor: SODIMM; Data Rate: 1066 MT/s, 1333 MT/s, 1600 MT/s, 1866 MT/s; Capacity: 4GB; Function: Non-ECC Unbuffered Memory; Pin N...

Napájecí zdroj 24V/2.5A, 60W

Napájecí zdroj 12V/7A, 84W

4GB DDR3 SODIMM 1866MHz, 512Mx8, Samsung, 0°C~+85°C, 1.5V; Specifications: Interface DDR3; Form Factor SODIMM; Data Rate 1066 MT/s, 1333 MT/s, 1600 MT/s, 1866 MT/s; Capacity 4GB; Function Non-ECC Unbuffered Memory; Pin Number 204pin; Width 64Bits; Volt...

16GB DDR4 SO-DIMM, 2666MHz, 1Gx8, Samsung 0°C~+85°C, 1.2V; Interface DDR4; Form Factor SODIMM; Data Rate 2133 MT/s, 2400 MT/s, 2666 MT/s; Capacity 16GB; Function Non-ECC Unbuffered Memory; Pin Number 260pin; Width 64Bits; Voltage 1.2V; PCB Height 1.18 ...

8 GB DDR3L SO-DIMM 1866 MHz, 512Mx8, 0°C~+85°C, 1.5V/1.35V; Non-ECC Unbuffer Memory; Interface : DDR3; Form Factor: SODIMM; Data Rate: 1066 MT/s, 1333 MT/s, 1600 MT/s, 1866 MT/s; Capacity: 8GB; Function: Non-ECC Unbuffered Memory; Pin Number: 2...

2 GB DDR3L SO-DIMM 1866 MHz, 256Mx16, 0°C~+85°C, 1.5V/1.35V; Non-ECC Unbuffer Memory; Interface : DDR3; Form Factor: SODIMM; Data Rate: 1066 MT/s, 1333 MT/s, 1600 MT/s, 1866 MT/s; Capacity: 2GB; Function: Non-ECC Unbuffered Memory; Pin Number: ...

4GB DDR4 SO-DIMM VLP, 2666MHz, 512Mx8, Samsung 0°C~+85°C, 1.2V; VLP moduly jsou svou kompaktní velikostí přizpůsobeny pro použití v 1U systémech. Moduly jsou plně kompatibilní s platformou Intel® Purely a splňují všechny příslušné normy JEDEC. Specific...

8GB DDR4 SO-DIMM VLP, 2666MHz, 1Gx8, Samsung 0°C~+85°C, 1.2V; VLP moduly jsou svou kompaktní velikostí přizpůsobeny pro použití v 1U systémech. Moduly jsou plně kompatibilní s platformou Intel® Purely a splňují všechny příslušné normy JEDEC. Specificat...

8GB DDR4 DIMM VLP, 2666MHz, 1Gx8, Samsung 0°C~+85°C, 1.2V; VLP moduly jsou svou kompaktní velikostí přizpůsobeny pro použití v 1U systémech. Moduly jsou plně kompatibilní s platformou Intel® Purely a splňují všechny příslušné normy JEDEC. Specification...

16GB DDR4 DIMM VLP, 2666MHz, 1Gx8, Samsung 0°C~+85°C, 1.2V; VLP moduly jsou svou kompaktní velikostí přizpůsobeny pro použití v 1U systémech. Moduly jsou plně kompatibilní s platformou Intel® Purely a splňují všechny příslušné normy JEDEC. Specificatio...

4GB DDR4 SO-DIMM, 2666MHz, 512Mx8, Samsung -40°C~+85°C, 1.2V; Specifications: Interface DDR4; Form Factor WT SODIMM; Data Rate 2133 MT/s, 2400 MT/s, 2666 MT/s,; Capacity 4GB,; Function Non-ECC Unbuffered Memory; Pin Number 260pin; Width 64Bits;...

8GB DDR4 SO-DIMM, 2666MHz, 1Gx8, Samsung -40°C~+85°C, 1.2V Specifications: Interface DDR4 Form Factor WT SODIMM Data Rate 2133 MT/s, 2400 MT/s, 2666 MT/s, Capacity 8GB, Function Non-ECC Unbuffered Memory Pin Number 260pin Width 64Bits Voltage 1.

4GB DDR4 DIMM, 2666MHz, 512Mx8, Samsung -40°C~+85°C, 1.2V Specifications: Interface DDR4 Form Factor UDIMM Data Rate 2133 MT/s, 2400 MT/s, 2666 MT/s Capacity 4GB, Function Non-ECC Unbuffered Memory Pin Number 288pin Width 64Bits Voltage 1.2V PCB

8GB DDR4 DIMM, 2666MHz, 1Gx8, Samsung -40°C~+85°C, 1.2V Specifications: Interface DDR4 Form Factor UDIMM Data Rate 2133 MT/s, 2400 MT/s, 2666 MT/s Capacity 8GB, Function Non-ECC Unbuffered Memory Pin Number 288pin Width 64Bits Voltage 1.2V PCB H

8GB DDR4 DIMM, 2666MHz, 1Gx8, Samsung 0°C~+85°C, 1.2V Specifications: Interface DDR4 Form Factor UDIMM Data Rate 2133 MT/s, 2400 MT/s, 2666 MT/s Capacity 8GB, Function Non-ECC Unbuffered Memory Pin Number 288pin Width 64Bits Voltage 1.2V PCB Hei

4GB DDR3L DIMM 1866MHz, 512Mx8, Samsung, 0°C~+85°C, 1.5V/1.35V Specifications: Interface DDR3 Form Factor UDIMM Data Rate 1066 MT/s, 1333 MT/s, 1600 MT/s, 1866 MT/s Capacity 4GB Function Non-ECC Unbuffered Memory Pin Number 240pin Width 64Bits Vo

8GB DDR3L DIMM 1866MHz, 512Mx8, Samsung, 0°C~+85°C, 1.5V/1.35V Specifications: Interface DDR3 Form Factor UDIMM Data Rate 1066 MT/s, 1333 MT/s, 1600 MT/s, 1866 MT/s Capacity 8GB Function Non-ECC Unbuffered Memory Pin Number 240pin Width 64Bits Vo

32GB DDR4 RDIMM,SERVER, 2666MHz, 2Gx4, Samsung 0°C~+85°C, 1.2V Specifications: Interface DDR4 Form Factor RDIMM Data Rate 2133 MT/s, 2400 MT/s, 2666 MT/s Capacity 32GB Function Registered Memory with ECC Pin Number 288pin Width 72Bits Voltage 1.2

16GB DDR4 RDIMM,SERVER, 2666MHz, 1Gx8, Samsung 0°C~+85°C, 1.2V ECC Specifications: Interface DDR4 Form Factor RDIMM Data Rate 2133 MT/s, 2400 MT/s, 2666 MT/s Capacity 16GB Function Registered Memory with ECC Pin Number 288pin Width 72Bits Voltage